Mid-Infrared Light Emitting Diode

Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions GaInAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED19 has a stable ouput power and a lifetime more then 80000 hours.

Specifications
• Structure: GaInAsSb/AlGaAsSb
• Peak Wavelength: typ. 1.95 µm
• Optical Output Power: typ. 1 mW qCW
• Package: TO-18
   with cap and window