L125 Даташит - Polyfet RF Devices
Номер в каталоге
L125
Компоненты Описание
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2 Pages
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31.5 kB
производитель
Polyfet RF Devices
15.0 Watts Single Ended Package Style SO8-1
HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
General Description
Silicon VDMOS and LDMOS
transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.
Номер в каталоге
Компоненты Описание
PDF
производитель
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR ( Rev : 2001 )
Polyfet RF Devices
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