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KAI-1010-ABA-CD-AE Даташит - ON Semiconductor

KAI-1010 image

Номер в каталоге
KAI-1010-ABA-CD-AE

Компоненты Описание

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page
27 Pages

File Size
299 kB

производитель
ONSEMI
ON Semiconductor ONSEMI

Description
The KAI−1010 Image Sensor is a high-resolution monochrome charge coupled device (CCD) device whose non-interlaced architecture makes it ideally suited for video, electronic still and motion/still camera applications. The device is built using an advanced true two-phase, double-polysilicon, NMOS CCD technology. The p+npn− photodetector elements eliminate image lag and reduce image smear while providing antiblooming protection and electronic-exposure control. The total chip size is 10.15 (H) mm × 10.00 (V) mm


FEATUREs
• Front Illuminated Interline Architecture
• Progressive Scan (Non-Interlaced)
• Electronic Shutter
• On-Chip Dark Reference
• Low Dark Current
• High Sensitivity Output Structure
• Anti-Blooming Protection
• Negligible Lag
• Low Smear (0.1% with Microlens)


APPLICATION
• Machine Vision


Номер в каталоге
Компоненты Описание
PDF
производитель
6576 (H) x 4384 (V) Interline CCD Image Sensor ( Rev : 2015 )
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6576 (H) x 4384 (V) Interline CCD Image Sensor
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2336 (H) x 1752 (V) Interline CCD Image Sensor
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2048 (H) x 2048 (V) Interline CCD Image Sensor
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1920 (H) x 1080 (V) Interline CCD Image Sensor
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1920 (H) X 1080 (V) INTERLINE CCD IMAGE SENSOR
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768 (H) x 484 (V) Interline CCD Image Sensor
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4872 (H) x 3248 (V) Interline CCD Image Sensor
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3648 (H) X 2760 (V) INTERLINE CCD IMAGE SENSOR
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3296 (H) x 2472 (V) Interline CCD Image Sensor ( Rev : 2016 )
ON Semiconductor

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