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K9K8G08U1B-I Даташит - Samsung

K9G4G08U0B image

Номер в каталоге
K9K8G08U1B-I

Компоненты Описание

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page
43 Pages

File Size
1,007.6 kB

производитель
Samsung
Samsung Samsung

GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9F4G08X0B is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08X0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mappingout algorithm. The K9F4G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.


FEATURES
• Voltage Supply
   - 2.7V Device(K9F4G08B0B) : 2.5V ~ 2.9V
   - 3.3V Device(K9F4G08U0B) : 2.7V ~ 3.6V
• Organization
   - Memory Cell Array : (512M + 16M) x 8bit
   - Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
   - Page Program : (2K + 64)Byte
   - Block Erase : (128K + 4K)Byte
• Page Read Operation
   - Page Size : (2K + 64)Byte
   - Random Read : 25µs(Max.)
   - Serial Access : 25ns(Min.)
• Fast Write Cycle Time
   - Page Program time : 200µs(Typ.)
   - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles(with 1bit/528Byte
      ECC)
   - Data Retention : 10 Years
• Command Driven Operation
• Unique ID for Copyright Protection
• Package :
   - K9F4G08B0B-PCB0/PIB0
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
   - K9F4G08U0B-PCB0/PIB0
      48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
   - K9F4G08U0B-ICB0/IIB0
      52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
   - K9K8G08U1B-ICB0/IIB0
      52 - Pin ULGA (12 x 17 / 1.00 mm pitch)


Номер в каталоге
Компоненты Описание
PDF
производитель
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
Samsung
1G-bit (128 M x 8 bit) NAND Flash Memory
Macronix International
4 Gbit (512M x 8 bit) NAND Flash Memory
Hynix Semiconductor
2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
Samsung
4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory
Samsung
64M x 8 Bit NAND Flash Memory
Samsung
256M x 8 Bit NAND Flash Memory
Samsung
64M x 8 Bit NAND Flash Memory
Samsung
64M x 8 Bit NAND Flash Memory
Samsung
256M x 8 Bit NAND Flash Memory
Samsung

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