GENERAL DESCRIPTION
The K6R4008C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008C1D is packaged in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.

FEATURES
• Fast Access Time 10ns(Max.)
• Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating K6R4008C1D-10 : 65mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
K6R4008C1D-J : 36-SOJ-400
K6R4008C1D-K : 36-SOJ-400(Lead-Free)
K6R4008C1D-T : 44-TSOP2-400BF
K6R4008C1D-U : 44-TSOP2-400BF(Lead-Free)
• Operating in Commercial and Industrial Temperature range.