1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant)

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/ sec/pin (DDR2-800) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM fea tures such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

KEY FEATUREs
• JEDEC standard VDD = 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
   - 50ohm ODT
   - High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
• All of products are Lead-Free, Halogen-Free, and RoHS compliant