datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Toshiba  >>> K2611 PDF

K2611 Даташит - Toshiba

2SK2611T image

Номер в каталоге
K2611

Other PDF
  1998   2002   2006  

PDF
DOWNLOAD     

page
6 Pages

File Size
415.3 kB

производитель
Toshiba
Toshiba Toshiba

DC−DC Converter, Relay Drive and Motor Drive Applications 

● Low drain−source ON-resistance : RDS (ON) = 1.2 Ω (typ.)
● High forward transfer admittance : |Yfs| = 7.0 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
● Enhancement−mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Page Link's: 1  2  3  4  5  6 

Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]