DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Low On-Resistance
   RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A)
   RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A)
• Low Ciss Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode