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K2411 Даташит - NEC => Renesas Technology

2SK2411-Z image

Номер в каталоге
K2411

Other PDF
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page
8 Pages

File Size
94.7 kB

производитель
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.


FEATURES
• Low On-Resistance
   RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)
   RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
• Low Ciss Ciss = 1500 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings

K2411

Page Link's: 1  2  3  4  5  6  7  8 

Номер в каталоге
Компоненты Описание
PDF
производитель
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET / MOS FIELD EFFECT TRANSISTOR
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE(MOS FIELD EFFECT TRANSISTOR)
NEC => Renesas Technology
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
POWER-MOS FET FIELD EFFECT POWER TRANSISTOR ( Rev : V2 )
New Jersey Semiconductor
POWER · MOS FET FIELD EFFECT POWER TRANSISTOR
New Jersey Semiconductor
N-Channel MOS Field Effect Power Transistor
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
NEC => Renesas Technology

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