datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  NEC => Renesas Technology  >>> K2158(M) PDF

K2158(M) Даташит - NEC => Renesas Technology

2SK2158(M) image

Номер в каталоге
K2158(M)

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
52.1 kB

производитель
NEC
NEC => Renesas Technology NEC

The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders.


FEATURES
• Capable of drive gate with 1.5 V
• Because of high input impedance, there is no need to consider driving current.
• Bias resistance can be omitted, enabling reduction in total number of parts.

Page Link's: 1  2  3  4  5  6 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]