K1359 Даташит - Toshiba
Номер в каталоге
K1359
Компоненты Описание
PDF
page
6 Pages
File Size
398.7 kB
производитель
Toshiba
DC−DC Converter and Motor Drive Applications
● Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
● High forward transfer admittance : |Yfs| = 2.0 S (typ.)
● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V)
● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSII.5) ( Rev : 1998 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSII.5) ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
Toshiba
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