Toshiba K12A50D Даташит, K12A50D PDF, даташитов

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K12A50D Даташит - Toshiba

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K12A50D

Компоненты Описание

Silicon N Channel MOS Type (π-MOSⅦ) Field Effect Transistor

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Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON)= 0.45 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS= 10 μA (VDS= 500 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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Компоненты Описание

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производитель

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