DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.

FEATUREs:
• High Reliability
• Base lead provided for conventional transistor biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation

APPLICATIONs:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control