datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  IXYS CORPORATION  >>> IXTP3N120 PDF

IXTP3N120(2004) Даташит - IXYS CORPORATION

IXTP3N110 image

Номер в каталоге
IXTP3N120

Компоненты Описание

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
4 Pages

File Size
559.9 kB

производитель
IXYS
IXYS CORPORATION IXYS

High Voltage Power MOSFETs

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt


FEATUREs
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
   Switching (UIS)
• Molding epoxies meet UL 94 V-0
   flammability classification

Advantages
• Easy to mount
• Space savings
• High power density


Номер в каталоге
Компоненты Описание
PDF
производитель
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage MOSFETs
IXYS CORPORATION
TOSHIBA POWER MOSFET TRANSISTOR / High Voltage MOSFETs
Toshiba
High Voltage Power MOSFETs w/ Extended FBSOA
IXYS CORPORATION
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]