HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Back Surface)
Single MOSFET Die
FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier
APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC & DC motor control
Advantages
• Easy assembly
• Space savings
• High power density
• Low noise to ground