HiPerFET™ Power MOSFET (Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
FEATUREs
• Silicon Chip on Direct-Copper Bond (DCB) Substrate
• Isolated Mounting Surface
• 2500V~ Electrical Isolation
• Avalanche Rated
• Fast Intrinsic Rectifier
• Low RDS(ON) and QG
Advantages
• Easy to Mount
• Space Savings
• High Power Density
APPLICATIONs
• DC-DC Converters
• Battery Chargers
• Switch-Mode and Resonant-Mode Power Supplies
• DC Choppers
• AC & DC Motor Controls