DESCRIPTION
TheISSIIS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES
• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
    VDD 1.65V to 2.2V (IS61WV102416ALL)
    speed = 20ns for VDD 1.65V to 2.2V
    VDD 2.4V to 3.6V (IS61/64WV102416BLL)
    speed = 10ns for VDD 2.4V to 3.6V
    speed = 8ns for VDD 3.3V + 5%
• Packages available:
    – 48-ball miniBGA (9mm x 11mm)
    – 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes