DESCRIPTION
The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performanceCMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
These features make the IS41LV44002B ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.

FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs
• Refresh Interval:
   – 2,048 cycles/32 ms
• Refresh Mode: RAS-Only,
   CAS-before-RAS (CBR), and Hidden
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40°C to +85°C
• Lead-free available