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IS41C16257C Даташит - Integrated Silicon Solution

IS41C16257C image

Номер в каталоге
IS41C16257C

Компоненты Описание

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page
20 Pages

File Size
288.9 kB

производитель
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS41C16257C/IS41LV16257C is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices ideal for use in 16- and 32-bit wide data bus systems.


FEATURES
•  Fast access and cycle time
•  TTL compatible inputs and outputs
•  Refresh Interval: 512 cycles/8 ms
•  Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
•  JEDEC standard pinout
•  Single power supply:
    5V ± 10% (IS41C16257C)
    3.3V ± 10% (IS41LV16257C)
•  Byte Write and Byte Read operation via two CAS
•  Lead-free available
•  Industrial temperature available

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Номер в каталоге
Компоненты Описание
PDF
производитель
256Kx16 4Mb DRAM WITH EDO PAGE MODE
Integrated Silicon Solution
256Kx16 4Mb DRAM WITH EDO PAGE MODE ( Rev : 2013 )
Integrated Silicon Solution
16Mb DRAM WITH FAST PAGE MODE
Integrated Silicon Solution
DRAM / FAST PAGE MODE TYPE
Oki Electric Industry
4Mx4 16Mb DRAM WITH FAST PAGE MODE
Integrated Silicon Solution
16MEG : x4 Fast Page Mode DRAM
Nanya Technology
16MEG : x4 Fast Page Mode DRAM
Unspecified
16MEG : x4 Fast Page Mode DRAM
Unspecified
1 MEG x 4 DRAM Fast Page Mode DRAM
Austin Semiconductor
1 MEG x 4 DRAM Fast Page Mode DRAM
Micross Components

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