DESCRIPTION
The ISSI IS32WV204816B is a high-performance CMOS Pseudo Static RAM, organized as 2Meg x 16 bits.
ISSI CMOS technology provides high density, high speed low power devices that features SRAM-like write timing. Data is written to memory cells on the rising edge of theWE signal. With a page size of 4 words, the device has a page access operation. The device also supports deep power-down mode providing low-power standby.
The IS32WV204816B is packaged in a 48-pin mini-BGA (6mm x 8mm).

FEATURES
● Access time: 70ns
● TTL compatible inputs and outputs; tri-state I/O
● Wide Power supply voltage: 2.2V to 3.6V
● CMOS Standby: 70µA (32-Mbit)
● Deep Power Down Standby: 5µA (32-Mbit)
● Deep Power-Down Mode: Data Invalid
● Page Operation Mode: Four Word Access
● Logic compatible with SRAM R/W (WE) pin.
● Industrial Temperature Range: -40oC to 85oC