datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  International Rectifier  >>> IRGB30B60KPBF PDF

IRGB30B60KPBF(2004) Даташит - International Rectifier

IRGB30B60KPBF image

Номер в каталоге
IRGB30B60KPBF

Компоненты Описание

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
13 Pages

File Size
313.2 kB

производитель
IR
International Rectifier IR

Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• TO-220 is available in PbF as Lead-Free


Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Номер в каталоге
Компоненты Описание
PDF
производитель
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
Toshiba
Insulated Gate Bipolar Transistor
Motorola => Freescale
Insulated Gate Bipolar Transistor
Renesas Electronics
Insulated Gate Bipolar Transistor
International Rectifier
Insulated Gate Bipolar Transistor ( Rev : 2013 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]