datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  International Rectifier  >>> IRG7PH42U-EP PDF

IRG7PH42U-EP Даташит - International Rectifier

IRG7PH42UPBF image

Номер в каталоге
IRG7PH42U-EP

Компоненты Описание

Other PDF
  2010  

PDF
DOWNLOAD     

page
10 Pages

File Size
283.1 kB

производитель
IR
International Rectifier IR

Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free


Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
   low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation


APPLICATIONs
• U.P.S
• Welding
• Solar inverter
• Induction heating


Номер в каталоге
Компоненты Описание
PDF
производитель
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
Toshiba
Insulated Gate Bipolar Transistor
Motorola => Freescale
Insulated Gate Bipolar Transistor
Renesas Electronics
Insulated Gate Bipolar Transistor
International Rectifier
Insulated Gate Bipolar Transistor ( Rev : 2013 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]