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IRG4PH50UD Даташит - International Rectifier

IRG4PH50UD image

Номер в каталоге
IRG4PH50UD

Other PDF
  no available.

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page
10 Pages

File Size
225.8 kB

производитель
IR
International Rectifier IR

Features
• UltraFast: Optimized for high operating
   frequencies up to 40 kHz in hard switching,
   >200 kHz in resonant mode
• New IGBT design provides tighter
   parameter distribution and higher efficiency than
   previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
   ultra-soft-recovery anti-parallel diodes for use in
   bridge configurations
• Industry standard TO-247AC package


Benefits
• Higher switching frequency capability than
   competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
   IGBTs . Minimized recovery characteristics require
   less/no snubbing


Номер в каталоге
Компоненты Описание
PDF
производитель
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode ( Rev : 2013 )
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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