INSULATED GATE BIPOLAR TRANSISTOR

FEATUREs
●High short circuit rating optimized for motor control, tsc=10µs, VCC = 720V, TJ= 125°C, VGE= 15V
●Combines low conduction losses with high switching speed
●Latest generation design provides tighter parameter distribution and higher efficiency than previous generations

Benefits
●As a Freewheeling Diode we recommend our HEXFRED^TM ultrafast, ultrasoft recovery diodes for minimum EMI/Noise and switching losses in the Diode and IGBT
●Latest generation 4 IGBTs offer highest power density motor controls possible
●This part replaces the IRGPH50K and IRGPH50M devices