Short Circuit Rated UltraFast IGBT

FEATUREs
• High switching speed optimized for up to 25kHz
   with low VCE(on)
• Short Circuit Rating 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
   parameter distribution and higher efficiency than
   previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
   ultra-soft-recovery anti-parallel diodes for use in
   bridge configurations
• Industry standard TO-220 FULLPAK

Benefits
• Generation 4 IGBTs offer highest efficiencies available
   maximizing the power density of the system
• IGBTs optimized for specific application conditions
• HEXFREDTM diodes optimized for performance with IGBTs.
   Minimized recovery characteristics reduce noise EMI
• Designed to exceed the power handling capability of
   equivalent industry-standard IGBT