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IRG4IBC20UD Даташит - International Rectifier

IRG4IBC20UD image

Номер в каталоге
IRG4IBC20UD

Other PDF
  no available.

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page
10 Pages

File Size
229 kB

производитель
IR
International Rectifier IR

Features
• 2.5kV, 60s insulation voltage 
• 4.8 mm creapage distance to heatsink
• UltraFast: Optimized for high operating
   frequencies 8-40 kHz in hard switching, >200
   kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast,
   ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 FullpakTM
   outline


Benefits
• Simplified assembly
• Highest efficiency and power density
• HEXFREDTM antiparallel Diode minimizes
   switching losses and EMI


Номер в каталоге
Компоненты Описание
PDF
производитель
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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