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IRG4IBC10UD Даташит - International Rectifier

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IRG4IBC10UD

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10 Pages

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IR
International Rectifier IR

UltraFast Co-Pack IGBT


FEATUREs
• UltraFast: Optimized for high operating up to
   80 kHz in hard switching, > 200 kHz in
   resonant mode
• Generation 4 IGBT design provides tighter
   parameter distribution and higher efficiency than
   previous generation
• IGBT co-packaged with HEXFRED® ultrafast,
   ultra-soft-recovery anti-parallel diodes for use
   in bridge configurations
• Industry standard TO-220 Full-Pak


Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED® diodes optimized for performance with IGBTs
   Minimized recovery characteristics require less/no snubbing


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Компоненты Описание
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производитель
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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