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IRG4BC30FD1PBF(2004) Даташит - International Rectifier

IRG4BC30FD1PBF image

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IRG4BC30FD1PBF

Компоненты Описание

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page
11 Pages

File Size
411.8 kB

производитель
IR
International Rectifier IR

Features
• Fast: Optimized for medium operating frequencies 
   (1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter 
   parameter distribution and higher efficiency than 
   Generation 3
• IGBT co-packaged with Hyperfast FRED diodes for ultra low
   recovery characteristics.
• Industry standard TO-247AB package
• Lead-Free


Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• FRED diodes optimized for performance with IGBTs. 
   Minimized recovery characteristics require less / no 
   snubbing




Номер в каталоге
Компоненты Описание
PDF
производитель
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE ( Rev : 2004 )
International Rectifier
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Motorola => Freescale
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
ON Semiconductor
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor

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