Features
• UltraFast: Optimized for high operating frequencies
   8-40 kHz in hard switching, >200kHz in resonant
   mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
   Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
   ultra-soft-recovery anti-parallel diodes for use in
   bridge configurations
• Industry standard D2Pak package
• Lead-Free

Benefits
• Generation 4 IGBTs offers highest efficiencies
   available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
   IGBTs . Minimized recovery characteristics require
   less/no snubbing
• Designed to be a "drop-in" replacement for
   equivalent industry-standard Generation 3 IR IGBTs