Features
• UltraFast: Optimized for high operating frequencies
    8-40 kHz in hard switching, >200kHz in resonant
    mode
• Generation 4 IGBT design provides tighter para-
    meter distribution and higher efficiency than
    Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
    ultra-soft-recovery anti-parallel diodes for use in
    bridge configurations
• Industry standard D2Pak package
• Lead-Free

Benefits
• Generation 4 IGBTs offers highest efficiencies
    available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
    IGBTs . Minimized recovery characteristics require
    less/no snubbing
• Designed to be a "drop-in" replacement for
    equivalent industry-standard Generation 3 IR IGBTs