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IRG4BC20UD Даташит - International Rectifier

IRG4BC20UD image

Номер в каталоге
IRG4BC20UD

Other PDF
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page
10 Pages

File Size
234.6 kB

производитель
IR
International Rectifier IR

Features
• UltraFast: optimized for high operating
   frequencies 8-40 kHz in hard switching, >200
   kHz in resonant mode
• Generation 4 IGBT design provides tighter
   parameter distribution and higher efficiency than
   Generation 3
• IGBT co-packaged with HEXFRED ultrafast,
   ultra-soft-recovery anti-parallel diodes for use in
   bridge configurations
• Industry standard TO-220AB package


Benefits
• Generation -4 IGBTs offer highest efficiencies
   available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
   IGBTs. Minimized recovery characteristics require
   less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
   industry-standard Generation 3 IR IGBTs


Номер в каталоге
Компоненты Описание
PDF
производитель
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode ( Rev : 2013 )
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier

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