IRFSL23N15D Даташит - International Rectifier
Номер в каталоге
IRFSL23N15D
Компоненты Описание
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PDF
page
11 Pages
File Size
135.7 kB
производитель
International Rectifier
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
APPLICATIONs
High frequency DC-DC converters
Номер в каталоге
Компоненты Описание
PDF
производитель
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
International Rectifier
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
International Rectifier
HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A
International Rectifier
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