DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild sproprietary,planar, DMOS technology.
This advanced technology has been minimize on-state resistance, provide superior switchingespecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.