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IRFR210 Даташит - International Rectifier

IRFR210 image

Номер в каталоге
IRFR210

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6 Pages

File Size
170.5 kB

производитель
IR
International Rectifier IR

DESCRIPTION
Third Generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210/SiHFR210)
• Straight Lead (IRFU210/SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling

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Номер в каталоге
Компоненты Описание
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производитель
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A
International Rectifier
HEXFET Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.9A
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Vishay Semiconductors
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International Rectifier
HEXFET Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
International Rectifier
HEXFET Power MOSFET(VDSS= 40V RDS(on)= 3.7mΩ ID= 75A)
International Rectifier
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
International Rectifier
HEXFET Power MOSFET Vdss=-55V, Rds(on)=0.06ohm,Id=-31A
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HEXFEP® Power MOSFET Vdss=200V RDS(on)=0.80Ω ID=4.8A
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