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IRFD210 Даташит - International Rectifier

IRFD210 image

Номер в каталоге
IRFD210

Компоненты Описание

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page
6 Pages

File Size
172.7 kB

производитель
IR
International Rectifier IR

DESCRIPTION
Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

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Номер в каталоге
Компоненты Описание
PDF
производитель
HEXFET power MOSFET
International Rectifier
HEXFET Power MOSFET.
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier

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