DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available