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IRFBA1404PPBF Даташит - International Rectifier

IRFBA1404PPBF image

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IRFBA1404PPBF

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page
10 Pages

File Size
198.4 kB

производитель
IR
International Rectifier IR

Description
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175°C junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. The Super-220™ is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die.


Benefits
Advanced Process Technology
Ultra Low On-Resistance
Increase Current Handling Capability
175°C Operating Temperature
Fast Switching
Dynamic dv/dt Rating
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

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Номер в каталоге
Компоненты Описание
PDF
производитель
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New Jersey Semiconductor
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International Rectifier

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