IRFB18N50K Даташит - Kersemi Electronic Co., Ltd.
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IRFB18N50K
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Kersemi Electronic Co., Ltd.
1. Low Gate Charge QgResults in Simple Drive Requirement
2. Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
3. Fully Characterized Capacitance and Avalanche Voltage and Current
4. Low RDS(on)
5. Lead (Pb)-free Available
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Компоненты Описание
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производитель
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
International Rectifier
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
International Rectifier
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