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IRF9Z24 Даташит - International Rectifier

IRF9Z24 image

Номер в каталоге
IRF9Z24

Компоненты Описание

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6 Pages

File Size
174 kB

производитель
IR
International Rectifier IR

Description
Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

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Номер в каталоге
Компоненты Описание
PDF
производитель
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
International Rectifier
Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)
International Rectifier
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Vishay Semiconductors
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
HEXFET® Power MOSFET VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier

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