Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Trench Technology
● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
● Available in Tape & Reel