Description
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

● RoHs Compliant Containing No Lead and Bromide 
● Integrated Monolithic Schottky Diode
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible 
● Low Package Inductance
● Optimized for High Frequency Switching 
● Ideal for CPU Core DC-DC Converters
● Optimized for Sync. FET socket of Sync. Buck Converter
● Low Conduction and Switching Losses
● Compatible with existing Surface Mount Techniques 
● 100% Rg tested
● Footprint compatible to DirectFET™