Description
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

● RoHs Compliant Containing No Lead and Bromide
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Ultra Low Package Inductance
● Optimized for High Frequency Switching
● Optimized for Synchronous Rectification for 5V to 12V outputs
● Ideal for 24V input Primary Side Forward Converters
● Low Conduction Losses
● Compatible with Existing Surface Mount Techniques