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IRF5850(2000) Даташит - International Rectifier

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IRF5850

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9 Pages

File Size
110.5 kB

производитель
IR
International Rectifier IR

Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
   
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Low Gate Charge
   

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Компоненты Описание
PDF
производитель
HEXFET power MOSFET
International Rectifier
HEXFET Power MOSFET.
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier
HEXFET Power MOSFET
International Rectifier

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