Power MOS Field-Effect Transistors
N-Channel Enhancement-Mode
Power Field-Effect Transistors
4.5A and 5.5A, 350V-400V rDS(0n) = 1.0Ω and 1.5Ω
FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device