IPS05N03LBG(2006) Даташит - Infineon Technologies
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IPS05N03LBG
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Infineon Technologies
OptiMOS®2 Power-Transistor
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
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