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IC61LV256 Даташит - Integrated Circuit Solution Inc

IC61LV256 image

Номер в каталоге
IC61LV256

Компоненты Описание

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page
9 Pages

File Size
118.1 kB

производитель
ICSI
Integrated Circuit Solution Inc ICSI

DESCRIPTION
The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 600 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IC61LV256 is available in the JEDEC standard 28-pin, 300mil SOJ and the 8*13.4mm TSOP-1 package.


FEATURES
• High-speed access times:
   -- 8, 10, 12, 15 ns
• Automatic power-down when chip is deselected
• CMOS low power operation
   -- 345 mW (max.) operating
   -- 7 mW (max.) CMOS standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three-state outputs

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Номер в каталоге
Компоненты Описание
PDF
производитель
256K x 8 Hight Speed SRAM with 3.3V
Integrated Circuit Solution Inc
Standard 32K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
32K X 8 BIT HIGH SPEED CMOS SRAM
Utron Technology Inc
32K X 8 BIT HIGH SPEED CMOS SRAM
AMIC Technology
32K X 8 BIT HIGH SPEED CMOS SRAM
Utron Technology Inc
32K X 8 BIT HIGH SPEED CMOS SRAM
AMIC Technology
32K X 8 BIT HIGH SPEED CMOS SRAM
Utron Technology Inc
32K X 8 BIT HIGH SPEED CMOS SRAM
Utron Technology Inc
3.3V 32K X 8 CMOS SRAM (Common I/O)
Alliance Semiconductor
3.3V 32K X 8 CMOS SRAM (Common I/O)
Alliance Semiconductor

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