The HYB 5116160BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 5116160BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 5116160BSJ to be packaged in a standard SOJ 42 400 mil plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL.

Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Performance:
• Single + 5 V (± 10 %) supply
• Low power dissipation
    max. 550 active mW (-50 version)
    max. 495 active mW (-60 version)
    max. 440 active mW (-70 version)
    11 mW standby (TTL)
    5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and self refresh
• Fast page mode capability
• 2 CAS / 1 WE
• All inputs, outputs and clocks fully TTL-compatible
• 4096 refresh cycles/64 ms
• Plastic Package: P-SOJ-42-1 400 mil