Description
The HWF1681RA is a high power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package.

FEATUREs
• High Output Power: P1dB=34.5 dBm (typ.)
• High Gain: GL=15 Db (typ.)
• High Efficiency: PAE =43% (typ.)
• High Linearity: IP3=48 dBm (typ.)
• Class A or Class AB Operation
• Low Cost