DESCRIPTION
The HOA088X/089X series consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black thermoplastic housing. Phototransistor switching takes place whenever an opaque object passes through the slot between emitter and detector. This series allows the user to choose from available options: (1) mounting tab configuration, (2) detector aperture size, (3) electro-optical characteristics, and (4) housing materials.

FEATURES
• Phototransistor output
• Four mounting configurations
• Accurate position sensing
• 0.125 in.(3.18 mm) slot width
• Choice of detector aperture
• 24.0 in.(610 mm) min. 26 AWG UL 1429 wire leads
• Choice of opaque or IR transmissive housings