Description
HN58X24512I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).
It realizes high speed, low power consumption and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and low voltage circuitry technology.  It also has a 128-
byte page programming function to make it’s write operation faster.

FEATUREs
• Single supply:  1.8 V to 5.5 V
• Two-wire serial interface (I2CTM serial bus*1)
• Clock frequency:  1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V)
• Power dissipation:
 Standby:  3 µA (max)
 Active (Read):  2 mA (max)
 Active (Write):  5 mA (max)
• Automatic page write:  128-byte/page
• Write cycle time:  10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V)
• Endurance:  105 Cycles (Page write mode)
• Data retention:  10 Years